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산화물 양자소재 연구실(OQML)Oxide & Quantum Materials Lab

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Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

Home Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

Home Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

저자

Varistha Chobpattana, Junwoo Son, Jeremy JM Law, Roman Engel-Herbert, Cheng-Ying Huang, Susanne Stemmer

저널 정보

Applied Physics Letters

출간연도

2013/1/14

링크

https://doi.org/10.1063/1.4776656