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Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

저자

V Chobpattana†, J Son, JJM Law, R Engel-Herbert, CY Huang, S Stemmer*

저널 정보

출간연도

Applied Physics Letters 102, 022907 (2013)